| Maximum Continuous Drain Current (A) |
0.34 |
| Minimum Forward Transconductance (S) |
0.08 |
| Typical Gate Charge @ Vgs (nC) |
1.6@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
350 |
| Typical Gate to Drain Charge (nC) |
0.25 |
| Typical Gate to Source Charge (nC) |
0.47 |
| Maximum Junction Ambient Thermal Resistance (°C/W) |
357 |
| Typical Reverse Recovery Charge (nC) |
2.5 |
| Maximum Diode Forward Voltage (V) |
1.2 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
1.5 |
| Maximum Gate Threshold Voltage (V) |
2.5 |
| Maximum IDSS (uA) |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
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