| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
40 |
| Maximum Absolute Continuous Drain Current (A) |
45 |
| Maximum Continuous Drain Current (A) |
45 |
| Maximum Gate-Source Voltage (V) |
±20 |
| Maximum Drain-Source Resistance (mOhm) |
14@10V |
| Typical Gate Charge @ Vgs (nC) |
60@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Typical Gate Charge @ 10V (nC) |
60 |
| Maximum Power Dissipation (mW) |
80000 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
350 |
| Typical Gate to Drain Charge (nC) |
12 |
| Typical Gate to Source Charge (nC) |
10 |
| Typical Input Capacitance @ Vds (pF) |
3300@20V |
| Typical Turn-On Delay Time (ns) |
13 |
| Typical Turn-Off Delay Time (ns) |
28 |
| Typical Fall Time (ns) |
14 |
| Typical Rise Time (ns) |
11 |
| Maximum Gate Threshold Voltage (V) |
2.5 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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