| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain |
| Maximum Drain-Source Voltage (V) |
60 |
| Maximum Absolute Continuous Drain Current (A) |
5.1 |
| Maximum Continuous Drain Current (A) |
5.1 |
| Maximum Gate-Source Voltage (V) |
±20 |
| Maximum Drain-Source Resistance (mOhm) |
89@10V |
| Typical Gate Charge @ Vgs (nC) |
20@10V |
| Typical Gate Charge @ 10V (nC) |
20 |
| Maximum Power Dissipation (mW) |
2000 |
| Category |
Power MOSFET |
| Typical Input Capacitance @ Vds (pF) |
832@30V |
| Typical Turn-On Delay Time (ns) |
8 |
| Typical Turn-Off Delay Time (ns) |
35 |
| Typical Fall Time (ns) |
16 |
| Typical Rise Time (ns) |
6 |
| Maximum Gate-Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
3 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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