| Type |
NPN|PNP |
| Configuration |
Dual Common Emitter |
| Maximum Collector-Emitter Voltage (V) |
50 |
| Maximum Collector-Base Voltage (V) |
60 |
| Maximum Base-Emitter Voltage (V) |
7@NPN|6@PNP |
| Maximum DC Collector Current (A) |
0.15 |
| Material |
Si |
| Typical Transition Frequency (MHz) |
180@NPN|140@PNP |
| Maximum Power Dissipation (mW) |
150 |
| Maximum Collector Cut-Off Current (nA) |
100 |
| Maximum Collector-Emitter Saturation Voltage (V) |
0.4@5mA@50mA@NPN|0.5@5mA@50mA@PNP |
| Category |
Bipolar Small Signal |
| Minimum DC Current Gain |
120@1mA@6V |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |