Infineon Launches EiceDRIVER™ 1ED301xMC12I Series for High-Performance SiC Gate Driving

Infineon Technologies has introduced the EiceDRIVER™ 1ED301xMC12I family, a new line of high-performance isolated gate driver ICs featuring opto-emulator inputs. These devices are pin-compatible with existing opto-emulators and optocouplers while delivering improved common-mode transient immunity (CMTI), a robust output stage, and more accurate timing performance compared with traditional solutions. This compatibility allows engineers to transition to SiC-based designs without redesigning established optical control architectures. The series is well suited for applications that require fast, reliable, and SiC-ready gate drivers, including motor drives, solar inverters, EV chargers, and energy storage systems.

The 1ED301xMC12I family consists of three variants designed to support different switching technologies: the 1ED3010 for Si MOSFETs, the 1ED3011 for IGBTs, and the 1ED3012 for SiC MOSFETs. All devices provide output currents of up to 6.5 A, making them suitable for driving power modules and parallel switching configurations. These gate drivers are housed in a CTI 600, 6-pin DSO package that offers more than 8 mm of creepage and clearance distance. The insulation system is certified according to UL 1577 and is currently undergoing IEC 60747-17 certification. The opto-emulator input design uses two pins and delivers strong noise immunity. Additionally, the devices achieve CMTI exceeding 300 kV/µs, propagation delays of approximately 40 ns, and timing matching below 10 ns, enabling precise and stable switching performance. A pure PMOS source stage further enhances turn-on efficiency.