Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
600 |
Maximum Continuous Drain Current (A) |
37 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
104@10V |
Typical Gate Charge @ Vgs (nC) |
107@10V |
Typical Gate Charge @ 10V (nC) |
107 |
Maximum Power Dissipation (mW) |
357000 |
Process Technology |
SuperFET II |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
4475@100V |
Typical Turn-On Delay Time (ns) |
34 |
Typical Turn-Off Delay Time (ns) |
98 |
Typical Fall Time (ns) |
5 |
Typical Rise Time (ns) |
24 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum Gate Threshold Voltage (V) |
5 |
Maximum IDSS (uA) |
10 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |