| Channel Type |
N |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
65 |
| Maximum Frequency (MHz) |
3600 |
| Maximum Output Power (W) |
1.26(Typ) |
| Maximum Duty Cycle (%) |
10 |
| Typical Power Gain @ Vds (dB) |
21.7 |
| Maximum VSWR |
5 |
| Typical Power 1dB Compression (dBm) |
40 |
| Minimum Frequency (MHz) |
728 |
| Mode of Operation |
1-Carrier W-CDMA |
| Typical Drain Efficiency (%) |
21.5 |
| Maximum Gate-Source Leakage Current (nA) |
1000 |
| Maximum Gate Threshold Voltage (V) |
1.6 |
| Maximum IDSS (uA) |
10 |
| Number of Elements per Chip |
1 |
| Process Technology |
LDMOS |
| Types of Output Stages |
Single Ended |
| Typical Power Gain (dB) |
21.7 |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Channel Mode |
Enhancement |
| Maximum Gate-Source Voltage (V) |
10 |
| Minimum Operating Temperature (°C) |
-40 |
| Maximum Operating Temperature (°C) |
150 |
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