AON6411 Alpha and Omega Semiconductor, Inc. MOSFET P-CH 20V 47A 8DFN

2025/12/12 0

CATALOG

China

Channel Type	P
Channel Mode	Enhancement
Configuration	Single Quad Drain Triple Source
Maximum Drain-Source Voltage (V)	20
Maximum Continuous Drain Current (A)	47
Maximum Gate-Source Voltage (V)	±12
Maximum Drain-Source Resistance (mOhm)	2.1@10V
Typical Gate Charge @ Vgs (nC)	100@4.5V\|235@10V
Typical Gate Charge @ 10V (nC)	235
Maximum Power Dissipation (mW)	7300
Category	Power MOSFET
Typical Input Capacitance @ Vds (pF)	10290@10V
Typical Turn-On Delay Time (ns)	9
Typical Turn-Off Delay Time (ns)	282
Typical Fall Time (ns)	90
Typical Rise Time (ns)	18
Maximum Gate-Source Leakage Current (nA)	100
Maximum Gate Threshold Voltage (V)	1.3
Maximum IDSS (uA)	1
Number of Elements per Chip	1
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150

Supplier Package	DFN EP
Basic Package Type	Non-Lead-Frame SMT
Pin Count	8
Lead Shape	No Lead
PCB	8
Tab	N/R
Pin Pitch (mm)	1.27
Package Length (mm)	5.2
Package Width (mm)	5.55
Package Height (mm)	0.95(Max)
Package Diameter (mm)	N/R
Seated Plane Height (mm)	0.95
Mounting	Surface Mount
Package Weight (g)	N/A
Package Material	Plastic
Package Description	Dual Flat Package No Lead, Exposed Pad
Package Family Name	DFN
Package Outline	Link to Datasheet

MSL	N/A
Maximum Reflow Temperature (°C)	260
Reflow Solder Time (Sec)	30
Number of Reflow Cycle	3
Standard	J-STD-020D
Reflow Temp. Source	Link to Datasheet
Maximum Wave Temperature (°C)	N/R
Wave Solder Time (Sec)	N/R
Lead Finish(Plating)	Matte Sn
Under Plating Material	N/A
Terminal Base Material	Cu