BC846BDW1T1G onsemi TRANS 2NPN 65V 0.1A SOT363

Type	NPN
Configuration	Dual
Maximum Collector-Emitter Voltage (V)	65
Maximum Collector Base Voltage (V)	80
Maximum Emitter Base Voltage (V)	6
Maximum DC Collector Current (A)	0.1
Minimum Transition Frequency (MHz)	100
Maximum Power Dissipation (mW)	380
Typical Output Capacitance (pF)	4.5(Max)
Maximum Junction Ambient Thermal Resistance	328°C/W
Maximum Noise Figure (dB)	10
Operating Junction Temperature (°C)	-55 to 150
Maximum Collector Cut-Off Current (nA)	15
Maximum Collector-Emitter Saturation Voltage (V)	0.25@0.5mA@10mA\|0.6@5mA@100mA
Maximum Base Emitter Saturation Voltage (V)	0.7(Typ)@0.5mA@10mA\|0.9(Typ)@5mA@100mA
Category	Bipolar Small Signal
Minimum DC Current Gain	200@2mA@5V
Number of Elements per Chip	2
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150

MSL	1
Maximum Reflow Temperature (°C)	260
Reflow Solder Time (Sec)	30
Number of Reflow Cycle	3
Standard	N/A
Reflow Temp. Source	Link to Datasheet
Maximum Wave Temperature (°C)	N/R
Wave Solder Time (Sec)	N/R
Lead Finish(Plating)	Matte Sn annealed
Under Plating Material	N/A
Terminal Base Material	FeNi Alloy
Number of Wave Cycles	N/R

Packaging Suffix	T1
Packaging	Tape and Reel
Quantity Of Packaging	3000
Reel Diameter (in)	7
Reel Width (mm)	8.4(Min)
Tape Pitch (mm)	4
Tape Width (mm)	8
Feed Hole Pitch (mm)	4
Hole Center to Component Center (mm)	2
Component Orientation	Q2
Packaging Document	Link to Datasheet
Tape Type	Embossed