BC848BLT1G onsemi TRANS NPN 30V 0.1A SOT23

2024/05/23 315

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

CATALOG

China

Type	NPN
Configuration	Single
Maximum Collector-Emitter Voltage (V)	30
Maximum Collector Base Voltage (V)	30
Maximum Emitter Base Voltage (V)	5
Maximum DC Collector Current (A)	0.1
Minimum Transition Frequency (MHz)	100
Material	Si
Maximum Power Dissipation (mW)	300
Maximum Noise Figure (dB)	10
Maximum Junction Ambient Thermal Resistance	556°C/W
Typical Output Capacitance (pF)	4.5(Max)
Operating Junction Temperature (°C)	-55 to 150
Maximum Collector Cut-Off Current (nA)	15
Maximum Collector-Emitter Saturation Voltage (V)	0.25@0.5mA@10mA\|0.6@5mA@100mA
Maximum Base Emitter Saturation Voltage (V)	0.7(Typ)@0.5mA@10mA\|0.9(Typ)@5mA@100mA
Category	Bipolar Small Signal
Minimum DC Current Gain	200@2mA@5V
Number of Elements per Chip	1
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150

MSL	1
Maximum Reflow Temperature (°C)	260
Reflow Solder Time (Sec)	30
Number of Reflow Cycle	3
Standard	N/A
Reflow Temp. Source	Link to Datasheet
Maximum Wave Temperature (°C)	N/R
Wave Solder Time (Sec)	N/R
Lead Finish(Plating)	Matte Sn annealed
Under Plating Material	N/A
Terminal Base Material	CuFeNi
Number of Wave Cycles	N/R