type |
NPN |
Configuration |
Single |
Maximum Collector-Emitter Voltage (V) |
45 |
Maximum Collector Base Voltage (V) |
75 |
Maximum Emitter Base Voltage (V) |
5 |
Maximum DC Collector Current (A) |
0.8 |
Material |
Si |
Maximum Power Dissipation (mW) |
300 |
Maximum Junction Ambient Thermal Resistance |
556°C/W |
Maximum Noise Figure (dB) |
10 |
Maximum Turn-Off Time (ns) |
400 |
Maximum Collector-Emitter Saturation Voltage (V) |
0.3@10mA@100mA|0.7@50mA@500mA |
Maximum Base Emitter Saturation Voltage (V) |
2@50mA@500mA |
Category |
Bipolar Small Signal |
Minimum DC Current Gain |
50@100uA@10V|110@10mA@1V|160@100mA@1V|60@500mA@2V |
Number of Elements per Chip |
1 |
Maximum Turn-On Time (ns) |
100 |
Maximum Transition Frequency (MHz) |
100(Min) |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |