BCW66GLT1G onsemi TRANS NPN 45V 0.8A SOT-23

2024/03/28 316

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

CATALOG

China

Malaysia

type	NPN
Configuration	Single
Maximum Collector-Emitter Voltage (V)	45
Maximum Collector Base Voltage (V)	75
Maximum Emitter Base Voltage (V)	5
Maximum DC Collector Current (A)	0.8
Material	Si
Maximum Power Dissipation (mW)	300
Maximum Junction Ambient Thermal Resistance	556°C/W
Maximum Noise Figure (dB)	10
Maximum Turn-Off Time (ns)	400
Maximum Collector-Emitter Saturation Voltage (V)	0.3@10mA@100mA\|0.7@50mA@500mA
Maximum Base Emitter Saturation Voltage (V)	2@50mA@500mA
Category	Bipolar Small Signal
Minimum DC Current Gain	50@100uA@10V\|110@10mA@1V\|160@100mA@1V\|60@500mA@2V
Number of Elements per Chip	1
Maximum Turn-On Time (ns)	100
Maximum Transition Frequency (MHz)	100(Min)
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150

MSL	1
Maximum reflow temperature (°C)	260
Reflow soldering time (seconds)	30
Number of reflow cycles	3
standard	not applicable
Reflow temperature source	Link to datasheet
Maximum wave soldering temperature (°C)	N/R
Wave soldering time (seconds)	N/R
Lead Finish(Plating)	Matte Sn annealed
Plating materials	not applicable
Terminal Base Material	FeNiAlloy