| Channel Type |
N |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
20 |
| Maximum Continuous Drain Current (A) |
0.03 |
| Maximum Frequency (MHz) |
300 |
| Maximum Power Dissipation (mW) |
200 |
| Typical Output Capacitance @ Vds (pF) |
0.9@10V |
| Typical Power Gain @ Vds (dB) |
27@10V |
| Typical Forward Transconductance (S) |
0.02 |
| Typical Input Capacitance @ Vds (pF) |
2.5@10V |
| Maximum Noise Figure (dB) |
2.1(Typ) |
| Number of Elements per Chip |
1 |
| Types of Output Stages |
Single Ended |
| Typical Power Gain (dB) |
27 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Maximum Gate Source Voltage (V) |
±6.5 |
| Material |
Si |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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