| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
40 |
| Maximum Continuous Drain Current (A) |
24 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
2.7@10V |
| Typical Gate Charge @ Vgs (nC) |
31@4.5V|64@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Typical Gate Charge @ 10V (nC) |
64 |
| Maximum Power Dissipation (mW) |
2500 |
| Process Technology |
OptiMOS |
| Category |
Power MOSFET |
| Maximum Junction Case Thermal Resistance (°C/W) |
1.5°C/W |
| Typical Input Capacitance @ Vds (pF) |
5100@20V |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
400 |
| Typical Turn-On Delay Time (ns) |
9.8 |
| Typical Turn-Off Delay Time (ns) |
39 |
| Typical Fall Time (ns) |
6.2 |
| Typical Rise Time (ns) |
5.6 |
| Maximum Gate Threshold Voltage (V) |
2 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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