Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single Quad Drain Triple Source |
Maximum Drain Source Voltage (V) |
100 |
Maximum Continuous Drain Current (A) |
100 |
Maximum Gate Source Voltage (V) |
20 |
Maximum Drain Source Resistance (mOhm) |
3.5@10V |
Typical Gate Charge @ Vgs (nC) |
70@10V |
Typical Gate Charge @ 10V (nC) |
70 |
Maximum Power Dissipation (mW) |
2500 |
Process Technology |
OptiMOS 5 |
Category |
Power MOSFET |
Maximum Junction Ambient Thermal Resistance |
50K/W |
Typical Input Capacitance @ Vds (pF) |
5000@50V |
Maximum Pulsed Drain Current @ TC=25°C (A) |
400 |
Typical Turn-On Delay Time (ns) |
22 |
Typical Turn-Off Delay Time (ns) |
47 |
Typical Fall Time (ns) |
15 |
Typical Rise Time (ns) |
13 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum Gate Threshold Voltage (V) |
3.8 |
Maximum IDSS (uA) |
1 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |