| Channel Type |
N|P |
| Channel Mode |
Enhancement |
| Configuration |
Dual |
| Maximum Drain Source Voltage (V) |
20 |
| Maximum Continuous Drain Current (A) |
1.5 |
| Maximum Gate Source Voltage (V) |
±12 |
| Maximum Drain Source Resistance (mOhm) |
140@4.5V@N Channel|150@4.5V@P Channel |
| Typical Gate Charge @ Vgs (nC) |
0.73@4.5V@N Channel|3@5V@P Channel |
| Maximum Input Capacitance @ Vds (pF) |
143@10V@N Channel|346@10V@P Channel |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
500 |
| Process Technology |
OptiMOS 2|OptiMOS-P 2 |
| Minimum Gate Threshold Voltage (V) |
0.7@N Channel|1.2@P Channel |
| Category |
Small Signal |
| Typical Output Capacitance (pF) |
46@N Channel|110@P Channel |
| Maximum Junction Ambient Thermal Resistance |
250K/W |
| Maximum Positive Gate Source Voltage (V) |
12 |
| Typical Input Capacitance @ Vds (pF) |
110@10V@N Channel|270@10V@P Channel |
| Maximum Diode Forward Voltage (V) |
1.1 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
6 |
| Typical Turn-On Delay Time (ns) |
4.1@N Channel|6.7@P Channel |
| Typical Turn-Off Delay Time (ns) |
6.8@N Channel|14.5@P Channel |
| Typical Fall Time (ns) |
1.4@N Channel|14@P Channel |
| Typical Rise Time (ns) |
7.6@N Channel|9.7@P Channel |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
1.2@N Channel|0.6@P Channel |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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