| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
30 |
| Maximum Continuous Drain Current (A) |
10 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
13@10V |
| Typical Gate Charge @ Vgs (nC) |
9.5@10V |
| Typical Gate Charge @ 10V (nC) |
9.5 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
2100 |
| Process Technology |
OptiMOS |
| Minimum Gate Threshold Voltage (V) |
1 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
340 |
| Typical Gate to Drain Charge (nC) |
1.1 |
| Typical Gate to Source Charge (nC) |
2.7 |
| Maximum Junction Ambient Thermal Resistance |
60K/W |
| Typical Gate Resistance (Ohm) |
1.1 |
| Maximum Junction Case Thermal Resistance |
5K/W |
| Maximum Positive Gate Source Voltage (V) |
20 |
| Minimum Gate Resistance (Ohm) |
0.5 |
| Maximum Gate Resistance (Ohm) |
1.9 |
| Typical Input Capacitance @ Vds (pF) |
730@15V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
15@15V |
| Typical Diode Forward Voltage (V) |
0.89 |
| Typical Switch Charge (nC) |
2.6 |
| Maximum Diode Forward Voltage (V) |
1.1 |
| Typical Forward Transconductance (S) |
45 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
140 |
| Typical Turn-On Delay Time (ns) |
2.9 |
| Typical Turn-Off Delay Time (ns) |
13 |
| Typical Fall Time (ns) |
2.4 |
| Typical Rise Time (ns) |
2.6 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
2.2 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
OptiMOS™ |
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