| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
100 |
| Maximum Continuous Drain Current (A) |
0.17 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
6000@10V |
| Minimum Forward Transconductance (S) |
0.08 |
| ID For GFS (A) |
0.1 |
| VDS For GFS (V) |
25 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
225 |
| Process Technology |
PowerTrench |
| Minimum Gate Threshold Voltage (V) |
1.6 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
9 |
| Maximum Junction Ambient Thermal Resistance |
556°C/W |
| Maximum Positive Gate Source Voltage (V) |
20 |
| Typical Input Capacitance @ Vds (pF) |
20@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
4@25V |
| Maximum Diode Forward Voltage (V) |
1.3 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
0.68 |
| Typical Turn-On Delay Time (ns) |
20 |
| Typical Turn-Off Delay Time (ns) |
40 |
| Maximum Gate Source Leakage Current (nA) |
50 |
| Maximum Gate Threshold Voltage (V) |
2.6 |
| Maximum IDSS (uA) |
15 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
PowerTrench® |
| Supplier Temperature Grade |
Automotive |
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