| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
100 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
100 |
| Maximum Absolute Continuous Drain Current (A) |
100 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
9.4@10V |
| Typical Gate Charge @ Vgs (nC) |
27@10V |
| Typical Gate Charge @ 10V (nC) |
27 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
3200 |
| Process Technology |
NexFET |
| Minimum Gate Threshold Voltage (V) |
2.2 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
395 |
| Typical Gate to Drain Charge (nC) |
4.9 |
| Typical Gate to Source Charge (nC) |
7.9 |
| Maximum Junction Ambient Thermal Resistance |
50°C/W |
| Typical Gate Resistance (Ohm) |
1.2 |
| Maximum Junction Case Thermal Resistance |
1.3°C/W |
| Maximum Positive Gate Source Voltage (V) |
20 |
| Maximum Gate Resistance (Ohm) |
2.4 |
| Typical Input Capacitance @ Vds (pF) |
2050@50V |
| Typical Gate Threshold Voltage (V) |
2.8 |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
9.6@50V |
| Typical Reverse Recovery Charge (nC) |
163 |
| Typical Diode Forward Voltage (V) |
0.8 |
| Maximum Diode Forward Voltage (V) |
1 |
| Typical Reverse Recovery Time (ns) |
62 |
| Typical Forward Transconductance (S) |
63 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
231 |
| Typical Turn-On Delay Time (ns) |
6 |
| Typical Turn-Off Delay Time (ns) |
16 |
| Typical Fall Time (ns) |
5 |
| Typical Rise Time (ns) |
6 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
3.4 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
NexFET™ |
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