| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
20 |
| Maximum Continuous Drain Current (A) |
2.8 |
| Maximum Gate-Source Voltage (V) |
±12 |
| Maximum Drain-Source Resistance (mOhm) |
90@4.5V |
| Typical Gate Charge @ Vgs (nC) |
1.4@4.5V|2.8@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Typical Gate Charge @ 10V (nC) |
2.8 |
| Maximum Power Dissipation (mW) |
1100 |
| Minimum Gate Threshold Voltage (V) |
0.3 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
26 |
| Maximum Junction Ambient Thermal Resistance (°C/W) |
192 |
| Maximum Positive Gate-Source Voltage (V) |
12 |
| Typical Input Capacitance @ Vds (pF) |
130@10V |
| Maximum Diode Forward Voltage (V) |
1.2 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
12 |
| Typical Turn-On Delay Time (ns) |
0.6 |
| Typical Turn-Off Delay Time (ns) |
4.2 |
| Typical Fall Time (ns) |
1.7 |
| Typical Rise Time (ns) |
2.7 |
| Maximum Gate Threshold Voltage (V) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Supplier Temperature Grade |
Automotive |
One-stop supplier of IC products