DMP6023LFGQ-7 Diodes Incorporated MOSFET P-CH 60V 7.7A PWRDI3333-8

2025/08/18 13

• Low RDS(ON) – Ensures on State Losses Are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

CATALOG

China

Channel Type	P
Channel Mode	Enhancement
Configuration	Single Quad Drain Triple Source
Maximum Drain-Source Voltage (V)	60
Maximum Continuous Drain Current (A)	7.7
Maximum Gate-Source Voltage (V)	±20
Maximum Drain-Source Resistance (mOhm)	25@10V
Typical Gate Charge @ Vgs (nC)	26.5@4.5V\|53.1@10V
Typical Gate Charge @ 10V (nC)	53.1
Maximum Power Dissipation (mW)	2100
Category	Power MOSFET
Typical Input Capacitance @ Vds (pF)	2569@30V
Typical Turn-On Delay Time (ns)	6
Typical Turn-Off Delay Time (ns)	110
Typical Fall Time (ns)	62
Typical Rise Time (ns)	7.1
Number of Elements per Chip	1
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Supplier Temperature Grade	Automotive

Lead Finish(Plating)

Matte Sn annealed

• Backlighting

• Power-management functions

• DC-DC converters