Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single Dual Drain |
Maximum Drain Source Voltage (V) |
60 |
Maximum Absolute Continuous Drain Current (A) |
6.1 |
Maximum Continuous Drain Current (A) |
2.1 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
250@10V |
Typical Gate Charge @ Vgs (nC) |
4.8@4.5V|9.7@10V |
Typical Gate Charge @ 10V (nC) |
9.7 |
Maximum Power Dissipation (mW) |
1800 |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
551@30V |
Typical Turn-On Delay Time (ns) |
6.3 |
Typical Turn-Off Delay Time (ns) |
91.4 |
Typical Fall Time (ns) |
39.8 |
Typical Rise Time (ns) |
10.3 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum Gate Threshold Voltage (V) |
3 |
Maximum IDSS (uA) |
1 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |