| Channel Type |
N|P |
| Channel Mode |
Enhancement |
| Configuration |
Dual |
| Maximum Drain Source Voltage (V) |
20 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
0.2 |
| Maximum Absolute Continuous Drain Current (A) |
0.2 |
| Maximum Gate Source Voltage (V) |
±8@N Channel|±10@P Channel |
| Maximum Drain Source Resistance (mOhm) |
1000@4V@N Channel|1200@4.5V@P Channel |
| Maximum Power Dissipation (mW) |
150 |
| Category |
Small Signal |
| Typical Input Capacity @ Vds (pF) |
25@10V@N Channel|115@10V@P Channel |
| Typical Turn-On Delay Time (ns) |
5@N Channel|6@P Channel |
| Typical Turn-Off Delay Time (ns) |
15@N Channel|17@P Channel |
| Typical Fall Time (ns) |
10@N Channel|17@P Channel |
| Typical Rise Time (ns) |
10@N Channel|4@P Channel |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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