Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
40 |
Material |
Si |
Maximum Continuous Drain Current (A) |
6.7 |
Maximum Absolute Continuous Drain Current (A) |
24 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
44@10V |
Typical Gate Charge @ Vgs (nC) |
21@10V |
Typical Gate Charge @ 10V (nC) |
21 |
Maximum Power Dissipation (mW) |
42000 |
Process Technology |
TMOS |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
1165@20V |
Typical Turn-On Delay Time (ns) |
6 |
Typical Turn-Off Delay Time (ns) |
22 |
Typical Fall Time (ns) |
7 |
Typical Rise Time (ns) |
15 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
175 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |