| Channel Type | 
            P | 
          
          
            | Channel Mode | 
            Enhancement | 
          
          
            | Configuration | 
            Single | 
          
          
            | Maximum Drain Source Voltage (V) | 
            40 | 
          
          
            | Material | 
            Si | 
          
          
            | Maximum Continuous Drain Current (A) | 
            6.7 | 
          
          
            | Maximum Absolute Continuous Drain Current (A) | 
            24 | 
          
          
            | Maximum Gate Source Voltage (V) | 
            ±20 | 
          
          
            | Maximum Drain Source Resistance (mOhm) | 
            44@10V | 
          
          
            | Typical Gate Charge @ Vgs (nC) | 
            21@10V | 
          
          
            | Typical Gate Charge @ 10V (nC) | 
            21 | 
          
          
            | Maximum Power Dissipation (mW) | 
            42000 | 
          
          
            | Process Technology | 
            TMOS | 
          
          
            | Category | 
            Power MOSFET | 
          
          
            | Typical Input Capacitance @ Vds (pF) | 
            1165@20V | 
          
          
            | Typical Turn-On Delay Time (ns) | 
            6 | 
          
          
            | Typical Turn-Off Delay Time (ns) | 
            22 | 
          
          
            | Typical Fall Time (ns) | 
            7 | 
          
          
            | Typical Rise Time (ns) | 
            15 | 
          
          
            | Number of Elements per Chip | 
            1 | 
          
          
            | Minimum Storage Temperature (°C) | 
            -55 | 
          
          
            | Maximum Storage Temperature (°C) | 
            175 | 
          
          
            | Minimum Operating Temperature (°C) | 
            -55 | 
          
          
            | Maximum Operating Temperature (°C) | 
            150 |