Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single Quad Drain Triple Source |
Maximum Drain Source Voltage (V) |
100 |
Material |
Si |
Maximum Continuous Drain Current (A) |
12.4 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
8@10V |
Typical Gate Charge @ Vgs (nC) |
39@10V|22@5V |
Typical Gate Charge @ 10V (nC) |
39 |
Maximum Power Dissipation (mW) |
2500 |
Process Technology |
TMOS |
Category |
Power MOSFET |
Typical Output Capacitance (pF) |
460 |
Typical Input Capacitance @ Vds (pF) |
2255@50V |
Typical Turn-On Delay Time (ns) |
15 |
Typical Turn-Off Delay Time (ns) |
27 |
Typical Fall Time (ns) |
7 |
Typical Rise Time (ns) |
11 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |