| Channel Type |
N|P |
| Channel Mode |
Enhancement |
| Configuration |
Dual Dual Drain |
| Maximum Drain Source Voltage (V) |
20 |
| Maximum Continuous Drain Current (A) |
6.5@N Channel|5@P Channel |
| Maximum Gate Source Voltage (V) |
±10@N Channel|±12@P Channel |
| Maximum Drain Source Resistance (mOhm) |
30@4.5V@N Channel|55@4.5V@P Channel |
| Typical Gate Charge @ Vgs (nC) |
6.2@4.5V@N Channel|8.7@4.5V@P Channel |
| Maximum Power Dissipation (mW) |
2000 |
| Process Technology |
TMOS |
| Category |
Power MOSFET |
| Typical Input Capacitance @ Vds (pF) |
650@10V@N Channel|955@10V@P Channel |
| Typical Turn-On Delay Time (ns) |
8@N Channel|16@P Channel |
| Typical Turn-Off Delay Time (ns) |
15@N Channel|25@P Channel |
| Typical Fall Time (ns) |
4@N Channel|9@P Channel |
| Typical Rise Time (ns) |
9@N Channel|9@P Channel |
| Number of Elements per Chip |
2 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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