Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
100 |
Maximum Continuous Drain Current (A) |
33.5 |
Maximum Gate Source Voltage (V) |
±25 |
Maximum Drain Source Resistance (mOhm) |
60@10V |
Typical Gate Charge @ Vgs (nC) |
85@10V |
Typical Gate Charge @ 10V (nC) |
85 |
Maximum Power Dissipation (mW) |
3750 |
Process Technology |
DMOS |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
2240@25V |
Typical Turn-On Delay Time (ns) |
25 |
Typical Turn-Off Delay Time (ns) |
160 |
Typical Fall Time (ns) |
210 |
Typical Rise Time (ns) |
250 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum Gate Threshold Voltage (V) |
4 |
Maximum IDSS (uA) |
1 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
175 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |