| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
60 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
9 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
23@10V |
| Typical Gate Charge @ Vgs (nC) |
62@10V |
| Typical Gate Charge @ 10V (nC) |
62 |
| Maximum Power Dissipation (mW) |
3000 |
| Process Technology |
TrenchFET |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
237 |
| Typical Input Capacitance @ Vds (pF) |
4784@30V |
| Maximum Gate Threshold Voltage (V) |
4 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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