| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Dual Dual Drain |
| Maximum Drain Source Voltage (V) |
60 |
| Maximum Absolute Continuous Drain Current (A) |
20 |
| Maximum Continuous Drain Current (A) |
20 |
| Maximum Gate Source Voltage (V) |
±16 |
| Maximum Drain Source Resistance (mOhm) |
26@10V |
| Typical Gate Charge @ Vgs (nC) |
15@10V |
| Typical Gate Charge @ 10V (nC) |
15 |
| Maximum Power Dissipation (mW) |
33000 |
| Process Technology |
OptiMOS |
| Category |
Power MOSFET |
| Maximum Junction Case Thermal Resistance |
4.5K/W |
| Typical Input Capacitance @ Vds (pF) |
1100@25V |
| Typical Turn-On Delay Time (ns) |
5 |
| Typical Turn-Off Delay Time (ns) |
18 |
| Typical Fall Time (ns) |
10 |
| Typical Rise Time (ns) |
1.5 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
2.2 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
175 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
One-stop supplier of IC products