| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
650 |
| Maximum Absolute Continuous Drain Current (A) |
31.2 |
| Maximum Continuous Drain Current (A) |
31.2 |
| Maximum Gate-Source Voltage (V) |
20 |
| Maximum Drain-Source Resistance (mOhm) |
110@10V |
| Breakdown Voltage Type |
DSS |
| Typical Gate Charge @ Vgs (nC) |
118@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Typical Gate Charge @ 10V (nC) |
118 |
| Maximum Power Dissipation (mW) |
277800 |
| Process Technology |
CoolMOS |
| Minimum Gate Threshold Voltage (V) |
3.5 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
160 |
| Typical Gate to Drain Charge (nC) |
64 |
| Typical Gate to Source Charge (nC) |
21 |
| Maximum Junction Ambient Thermal Resistance (°C/W) |
62 |
| Typical Gate Resistance (Ohm) |
1.3 |
| Maximum Junction Case Thermal Resistance (°C/W) |
3.6 |
| Maximum Positive Gate-Source Voltage (V) |
20 |
| Typical Gate Threshold Voltage (V) |
4 |
| Typical Input Capacitance @ Vds (pF) |
3240@100V |
| Typical Diode Forward Voltage (V) |
0.9 |
| Typical Reverse Recovery Charge (nC) |
800 |
| Typical Reverse Recovery Time (ns) |
150 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
99.6 |
| Typical Turn-On Delay Time (ns) |
16 |
| Typical Turn-Off Delay Time (ns) |
68 |
| Typical Fall Time (ns) |
6 |
| Typical Rise Time (ns) |
11 |
| Maximum Gate-Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
4.5 |
| Maximum IDSS (uA) |
1.5 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
CoolMOS™ |
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