| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
55 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
110 |
| Maximum Absolute Continuous Drain Current (A) |
110 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
8@10V |
| Typical Gate Charge @ Vgs (nC) |
146(Max)@10V |
| Typical Gate Charge @ 10V (nC) |
146(Max) |
| Maximum Power Dissipation (mW) |
200000 |
| Process Technology |
HEXFET |
| Category |
Power MOSFET |
| Typical Gate to Drain Charge (nC) |
36 |
| Maximum Junction Case Thermal Resistance |
1K/W |
| Typical Input Capacitance @ Vds (pF) |
3247@25V |
| Typical Turn-On Delay Time (ns) |
14 |
| Typical Turn-Off Delay Time (ns) |
50 |
| Typical Fall Time (ns) |
65 |
| Typical Rise Time (ns) |
101 |
| Maximum Gate Threshold Voltage (V) |
4 |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
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