Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
100 |
Maximum Continuous Drain Current (A) |
38 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
60@10V |
Typical Gate Charge @ Vgs (nC) |
150@10V |
Typical Gate Charge @ 10V (nC) |
150 |
Maximum Power Dissipation (mW) |
3100 |
Process Technology |
HEXFET |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
2780@25V |
Typical Turn-On Delay Time (ns) |
14 |
Typical Turn-Off Delay Time (ns) |
72 |
Typical Fall Time (ns) |
55 |
Typical Rise Time (ns) |
63 |
Maximum Gate Threshold Voltage (V) |
4 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |