| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Dual Dual Drain |
| Maximum Drain Source Voltage (V) |
55 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
3.4 |
| Maximum Absolute Continuous Drain Current (A) |
3.4 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
105@10V |
| Typical Gate Charge @ Vgs (nC) |
26@10V |
| Typical Gate Charge @ 10V (nC) |
26 |
| Maximum Power Dissipation (mW) |
2000 |
| Process Technology |
HEXFET |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
210 |
| Typical Gate to Drain Charge (nC) |
8.4 |
| Typical Gate to Source Charge (nC) |
3 |
| Maximum Junction Ambient Thermal Resistance |
62.5°C/W |
| Typical Input Capacitance @ Vds (pF) |
690@25V |
| Typical Reverse Recovery Charge (nC) |
85 |
| Typical Forward Transconductance (S) |
3.3(Min) |
| Typical Turn-On Delay Time (ns) |
14 |
| Typical Turn-Off Delay Time (ns) |
43 |
| Typical Fall Time (ns) |
22 |
| Typical Rise Time (ns) |
10 |
| Maximum Gate Threshold Voltage (V) |
1(Min) |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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