| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
200 |
| Maximum Continuous Drain Current (A) |
2.5 |
| Maximum Absolute Continuous Drain Current (A) |
2.5 |
| Maximum Gate Source Voltage (V) |
±30 |
| Maximum Drain Source Resistance (mOhm) |
170@10V |
| Typical Gate Charge @ Vgs (nC) |
26@10V |
| Typical Gate Charge @ 10V (nC) |
26 |
| Maximum Power Dissipation (mW) |
2500 |
| Process Technology |
HEXFET |
| Category |
Power MOSFET |
| Typical Gate to Drain Charge (nC) |
12 |
| Maximum Junction Ambient Thermal Resistance |
50K/W |
| Typical Input Capacity @ Vds (pF) |
940@25V |
| Typical Turn-On Delay Time (ns) |
10 |
| Typical Turn-Off Delay Time (ns) |
17 |
| Typical Fall Time (ns) |
18 |
| Typical Rise Time (ns) |
3 |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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