| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Dual Dual Drain |
| Maximum Drain Source Voltage (V) |
20 |
| Material |
Si |
| Maximum Absolute Continuous Drain Current (A) |
2.4 |
| Maximum Continuous Drain Current (A) |
2.4 |
| Maximum Gate Source Voltage (V) |
±12 |
| Maximum Drain Source Resistance (mOhm) |
135@4.5V |
| Typical Gate Charge @ Vgs (nC) |
5.3@4.5V |
| Maximum Power Dissipation (mW) |
1250 |
| Process Technology |
HEXFET |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
130 |
| Typical Gate to Drain Charge (nC) |
2.2 |
| Typical Gate to Source Charge (nC) |
0.84 |
| Maximum Junction Ambient Thermal Resistance |
100°C/W |
| Typical Input Capacitance @ Vds (pF) |
260@15V |
| Typical Reverse Recovery Charge (nC) |
37 |
| Typical Forward Transconductance (S) |
2.6(Min) |
| Typical Turn-On Delay Time (ns) |
5.7 |
| Typical Turn-Off Delay Time (ns) |
15 |
| Typical Fall Time (ns) |
16 |
| Typical Rise Time (ns) |
24 |
| Maximum Gate Threshold Voltage (V) |
0.7(Min) |
| Number of Elements per Chip |
2 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
One-stop supplier of IC products