Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single Quad Drain Triple Source |
Maximum Drain Source Voltage (V) |
30 |
Material |
Si |
Maximum Continuous Drain Current (A) |
7 |
Maximum Absolute Continuous Drain Current (A) |
7 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
26@10V |
Typical Gate Charge @ Vgs (nC) |
46@10V |
Typical Gate Charge @ 10V (nC) |
46 |
Maximum Power Dissipation (mW) |
1790 |
Process Technology |
HEXFET |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
2204@25V |
Typical Turn-On Delay Time (ns) |
15 |
Typical Turn-Off Delay Time (ns) |
227 |
Typical Fall Time (ns) |
107 |
Typical Rise Time (ns) |
25 |
Number of Elements per Chip |
1 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |