IRF7726TRPBF Infineon Technologies MOSFET P-CH 30V 7A MICRO8

label:
2023/12/26 286


CATALOG
IRF7726TRPBF COUNTRY OF ORIGIN  
IRF7726TRPBF LIFECYCLE  
IRF7726TRPBF PARAMETRIC INFO
IRF7726TRPBF PACKAGE INFO
IRF7726TRPBF MANUFACTURING INFO  
IRF7726TRPBF PACKAGING INFO   


COUNTRY OF ORIGIN
Thailand
Malaysia
Israel


LIFECYCLE
Obsolete
Sep 30,2022


 
PARAMETRIC INFO
Channel Type P
Channel Mode Enhancement
Configuration Single Quad Drain Triple Source
Maximum Drain Source Voltage (V) 30
Material Si
Maximum Continuous Drain Current (A) 7
Maximum Absolute Continuous Drain Current (A) 7
Maximum Gate Source Voltage (V) ±20
Maximum Drain Source Resistance (mOhm) 26@10V
Typical Gate Charge @ Vgs (nC) 46@10V
Typical Gate Charge @ 10V (nC) 46
Maximum Power Dissipation (mW) 1790
Process Technology HEXFET
Category Power MOSFET
Typical Input Capacitance @ Vds (pF) 2204@25V
Typical Turn-On Delay Time (ns) 15
Typical Turn-Off Delay Time (ns) 227
Typical Fall Time (ns) 107
Typical Rise Time (ns) 25
Number of Elements per Chip 1
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
 
PACKAGE INFO
Supplier Package Micro
Pin Count 8
PCB 8
Tab N/R
Pin Pitch (mm) 0.65
Package Length (mm) 3
Package Width (mm) 3
Package Height (mm) 0.86
Package Diameter (mm) N/R
Package Overall Length (mm) 3
Package Overall Width (mm) 4.9
Package Overall Height (mm) 1.1(Max)
Seated Plane Height (mm) 1.1(Max)
Mounting Surface Mount
Package Material Plastic
Package Outline Link to Datasheet
 
MANUFACTURING INFO
MSL 1
Maximum Reflow Temperature (°C) 260
Reflow Solder Time (Sec) 10 to 30
Reflow Temp. Source Link to Datasheet
Maximum Wave Temperature (°C) 300
Wave Solder Time (Sec) N/A
Wave Temp. Source Link to Datasheet
Lead Finish(Plating) Matte Sn annealed
Under Plating Material N/A
Terminal Base Material Cu Alloy
Shelf Life Period 3 Years
 
PACKAGING INFO
Packaging Suffix TR
Packaging Tape and Reel
Quantity Of Packaging 4000
 

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