| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
30 |
| Maximum Continuous Drain Current (A) |
16 |
| Maximum Absolute Continuous Drain Current (A) |
16 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
6.6@10V |
| Typical Gate Charge @ Vgs (nC) |
31@4.5V|61@10V |
| Typical Gate Charge @ 10V (nC) |
61 |
| Maximum Power Dissipation (mW) |
2500 |
| Process Technology |
HEXFET |
| Category |
Power MOSFET |
| Typical Gate to Drain Charge (nC) |
14 |
| Maximum Junction Ambient Thermal Resistance |
50K/W |
| Typical Input Capacitance @ Vds (pF) |
2820@15V |
| Typical Turn-On Delay Time (ns) |
19 |
| Typical Turn-Off Delay Time (ns) |
160 |
| Typical Fall Time (ns) |
120 |
| Typical Rise Time (ns) |
64 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
One-stop supplier of IC products