IRFB4110PBF Infineon Technologies MOSFET N-CH 100V 120A TO-220AB

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2025/10/31 17
IRFB4110PBF Infineon Technologies MOSFET N-CH 100V 120A TO-220AB


• Ultra-low R<sub>DS(on)</sub> for minimal conduction loss.
• High current handling (up to 120 A continuous).
• Fast switching with optimized gate charge balance.
• Ruggedized design with avalanche energy capability.


CATALOG
IRFB4110PBF COUNTRY OF ORIGIN
IRFB4110PBF PARAMETRIC INFO
IRFB4110PBF PACKAGE INFO
IRFB4110PBF APPLICATIONS


COUNTRY OF ORIGIN
Malaysia
China
Philippines


PARAMETRIC INFO
Drain-Source Voltage (V<sub>DS</sub>)
100 V 
Continuous Drain Current (I<sub>D</sub>)
120 A @ 25 °C 
Pulsed Drain Current (I<sub>DM</sub>)
480 A 
Gate-Source Voltage (V<sub>GS</sub>)
±20 V
R<sub>DS(on)</sub> (Max)
3.7 mΩ @ V<sub>GS</sub
Total Gate Charge (Q<sub>G</sub>)
200 nC (typ.) 
Power Dissipation (P<sub>D</sub>)
300 W
Operating Temperature Range
−55 °C to +175 °C


PACKAGE INFO
• Package Type: TO-220AB, through-hole power package.
• Mounting Style: Through-hole (leaded).
• Pin Count: 3 pins (Drain, Source, Gate).
• Package Dimensions: JEDEC TO-220 standard; suitable for standard heatsinks.
• Marking: IRFB4110 or IRFB4110PBF (lead-free).
• Packaging: Bulk or tube; RoHS-compliant “PBF” suffix denotes lead-free manufacturing.


APPLICATIONS
• DC-DC Converters
• Motor Control
• Power Management
• Battery Management Systems (BMS)
• Renewable Energy Systems
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