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• Key Parameters Optimized for Class-D Audio
Amplifier Applications
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• Low RDSON for Improved Efficiency
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• Low QG and QSW for Better THD and Improved Efficiency
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• Low QRR for Better THD and Lower EMI
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• 175°C Operating Junction Temperature for Ruggedness
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• Can Deliver up to 300W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
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| CATALOG |
IRFB5620PBF COUNTRY OF ORIGIN
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IRFB5620PBF PARAMETRIC INFO
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IRFB5620PBF PACKAGE INFO
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IRFB5620PBF MANUFACTURING INFO
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IRFB5620PBF PACKAGING INFO
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IRFB5620PBF ECAD MODELS
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COUNTRY OF ORIGIN
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China
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Germany
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Israel
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Korea (Republic of)
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Malaysia
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Mexico
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Philippines
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Taiwan (Province of China)
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United Kingdom of Great Britain and Northern Ireland
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United States of America
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PARAMETRIC INFO
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| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
200 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
25 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
72.5@10V |
| Typical Gate Charge @ Vgs (nC) |
25@10V |
| Typical Gate Charge @ 10V (nC) |
25 |
| Maximum Power Dissipation (mW) |
144000 |
| Category |
Power MOSFET |
| Typical Input Capacitance @ Vds (pF) |
1710@50V |
| Typical Turn-On Delay Time (ns) |
8.6 |
| Typical Turn-Off Delay Time (ns) |
17.1 |
| Typical Fall Time (ns) |
9.9 |
| Typical Rise Time (ns) |
14.6 |
| Maximum Gate Threshold Voltage (V) |
5 |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
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PACKAGE INFO
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| Supplier Package |
TO-220AB |
| Basic Package Type |
Through Hole |
| Pin Count |
3 |
| Lead Shape |
Through Hole |
| PCB |
3 |
| Tab |
耳片 |
| Pin Pitch (mm) |
2.54 |
| Package Length (mm) |
10.67(Max) |
| Package Width (mm) |
4.83(Max) |
| Package Height (mm) |
9.02(Max) |
| Package Diameter (mm) |
N/R |
| Package Overall Length (mm) |
10.67(Max) |
| Package Overall Width (mm) |
4.83(Max) |
| Package Overall Height (mm) |
20.57(Max) |
| Seated Plane Height (mm) |
20.57(Max) |
| Mounting |
Through Hole |
| Package Weight (g) |
不适用 |
| Package Material |
Plastic |
| Package Description |
Transistor Outline Package |
| Package Family Name |
TO-220 |
| JEDEC |
TO-220AB |
| Package Outline |
Link to Datasheet |
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MANUFACTURING INFO
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| MSL |
N/R |
| Maximum Reflow Temperature (°C) |
260 |
| Reflow Solder Time (Sec) |
不适用 |
| Reflow Temperature Source |
Link to Datasheet |
| Maximum Wave Temperature (°C) |
300 |
| Wave Solder Time (Sec) |
不适用 |
| Wave Temp. Source |
Link to Datasheet |
| Lead Finish(Plating) |
Matte Sn annealed|Matte Sn |
| Under Plating Material |
N/A|Ni |
| Terminal Base Material |
Cu Alloy |
| Shelf Life Period |
3 Years |
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PACKAGING INFO
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| Packaging |
Tube |
| Quantity Of Packaging |
1000 |
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| ECAD MODELS |
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