| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single Dual Drain |
| Maximum Drain-Source Voltage (V) |
100 |
| Maximum Continuous Drain Current (A) |
1 |
| Maximum Absolute Continuous Drain Current (A) |
1 |
| Maximum Gate-Source Voltage (V) |
±20 |
| Maximum Drain-Source Resistance (mOhm) |
600@10V |
| Minimum Forward Transconductance (S) |
0.71 |
| ID For GFS (A) |
0.6 |
| VDS For GFS (V) |
50 |
| Breakdown Voltage Type |
DSS |
| Typical Gate Charge @ Vgs (nC) |
18(Max)@10V |
| Operating Junction Temperature (°C) |
-55 to 175 |
| Typical Gate Charge @ 10V (nC) |
18(Max) |
| Maximum Power Dissipation (mW) |
1300 |
| Process Technology |
0.3um |
| Minimum Gate Threshold Voltage (V) |
2 |
| Category |
Power MOSFET |
| Typical Gate to Drain Charge (nC) |
9(Max) |
| Typical Output Capacitance (pF) |
170 |
| Typical Gate to Source Charge (nC) |
3(Max) |
| Maximum Junction Ambient Thermal Resistance (°C/W) |
120 |
| Maximum Positive Gate-Source Voltage (V) |
20 |
| Typical Input Capacitance @ Vds (pF) |
390@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
45@25V |
| Typical Reverse Recovery Charge (nC) |
0.33 |
| Maximum Diode Forward Voltage (V) |
6.3 |
| Typical Reverse Recovery Time (ns) |
98 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
8 |
| Typical Forward Transconductance (S) |
0.71(Min) |
| Typical Turn-On Delay Time (ns) |
9.6 |
| Typical Turn-Off Delay Time (ns) |
21 |
| Typical Fall Time (ns) |
25 |
| Typical Rise Time (ns) |
29 |
| Maximum Gate-Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
4 |
| Maximum IDSS (uA) |
100 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
175 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
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