| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
150 |
| Maximum Absolute Continuous Drain Current (A) |
33 |
| Maximum Continuous Drain Current (A) |
33 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
42@10V |
| ID For GFS (A) |
21 |
| VDS For GFS (V) |
50 |
| Breakdown Voltage Type |
DSS |
| Minimum Forward Transconductance (S) |
35 |
| Typical Gate Charge @ Vgs (nC) |
26@10V |
| Typical Gate Charge @ 10V (nC) |
26 |
| Operating Junction Temperature (°C) |
-55 to 175 |
| Maximum Power Dissipation (mW) |
144000 |
| Process Technology |
HEXFET |
| Minimum Gate Threshold Voltage (V) |
3 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
155 |
| Typical Gate to Drain Charge (nC) |
9 |
| Typical Gate to Source Charge (nC) |
8.6 |
| Maximum Junction Ambient Thermal Resistance |
100°C/W |
| Typical Gate Resistance (Ohm) |
2.7 |
| Maximum Junction Case Thermal Resistance |
1.045°C/W |
| Maximum Positive Gate Source Voltage (V) |
20 |
| Typical Input Capacitance @ Vds (pF) |
1750@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
40@50V |
| Typical Reverse Recovery Charge (nC) |
177 |
| Maximum Diode Forward Voltage (V) |
1.3 |
| Typical Reverse Recovery Time (ns) |
70 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
140 |
| Typical Turn-On Delay Time (ns) |
15 |
| Typical Turn-Off Delay Time (ns) |
25 |
| Typical Fall Time (ns) |
20 |
| Typical Rise Time (ns) |
35 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
5 |
| Maximum IDSS (uA) |
20 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
175 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
| Tradename |
HEXFET® |
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