| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single Quint Source |
| Maximum Drain Source Voltage (V) |
60 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
338 |
| Maximum Absolute Continuous Drain Current (A) |
338 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
1.4@10V |
| Typical Gate Charge @ Vgs (nC) |
236@10V |
| Typical Gate Charge @ 10V (nC) |
236 |
| Maximum Power Dissipation (mW) |
375000 |
| Process Technology |
HEXFET |
| Category |
Power MOSFET |
| Maximum Junction Case Thermal Resistance |
0.4K/W |
| Typical Input Capacitance @ Vds (pF) |
12960@25V |
| Typical Turn-On Delay Time (ns) |
24 |
| Typical Turn-Off Delay Time (ns) |
168 |
| Typical Fall Time (ns) |
79 |
| Typical Rise Time (ns) |
102 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
3.7 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
175 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
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