Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
20 |
Maximum Continuous Drain Current (A) |
4.3 |
Maximum Absolute Continuous Drain Current (A) |
4.3 |
Maximum Gate Source Voltage (V) |
±12 |
Maximum Drain Source Resistance (mOhm) |
54@4.5V |
Typical Gate Charge @ Vgs (nC) |
6.9@4.5V |
Maximum Power Dissipation (mW) |
1300 |
Process Technology |
HEXFET |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
570@16V |
Typical Turn-On Delay Time (ns) |
7 |
Typical Turn-Off Delay Time (ns) |
43 |
Typical Fall Time (ns) |
25 |
Typical Rise Time (ns) |
12 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |