| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
20 |
| Material |
Si |
| Maximum Continuous Drain Current (A) |
3.7 |
| Maximum Absolute Continuous Drain Current (A) |
3.7 |
| Maximum Gate Source Voltage (V) |
±12 |
| Maximum Drain Source Resistance (mOhm) |
65@4.5V |
| Typical Gate Charge @ Vgs (nC) |
8@5V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
1300 |
| Process Technology |
HEXFET |
| Minimum Gate Threshold Voltage (V) |
0.4 |
| Category |
Power MOSFET |
| Typical Gate to Drain Charge (nC) |
2.8 |
| Typical Output Capacitance (pF) |
145 |
| Typical Gate to Source Charge (nC) |
1.2 |
| Maximum Junction Ambient Thermal Resistance |
100°C/W |
| Maximum Positive Gate Source Voltage (V) |
12 |
| Typical Input Capacitance @ Vds (pF) |
633@10V |
| Typical Gate Threshold Voltage (V) |
0.55 |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
110@10V |
| Typical Reverse Recovery Charge (nC) |
11 |
| Maximum Diode Forward Voltage (V) |
1.2 |
| Typical Reverse Recovery Time (ns) |
29 |
| Typical Forward Transconductance (S) |
6(Min) |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
22 |
| Typical Turn-On Delay Time (ns) |
350 |
| Typical Turn-Off Delay Time (ns) |
588 |
| Typical Fall Time (ns) |
381 |
| Typical Rise Time (ns) |
48 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
1.2 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
HEXFET® |
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