Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
20 |
Maximum Absolute Continuous Drain Current (A) |
36 |
Maximum Continuous Drain Current (A) |
36 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
20@10V |
Typical Gate Charge @ Vgs (nC) |
6.5@4.5V |
Maximum Power Dissipation (mW) |
47000 |
Process Technology |
HEXFET |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
670@10V |
Typical Turn-On Delay Time (ns) |
8.7 |
Typical Turn-Off Delay Time (ns) |
10 |
Typical Fall Time (ns) |
4.5 |
Typical Rise Time (ns) |
78 |
Number of Elements per Chip |
1 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |