| Type |
NPN |
| Configuration |
Single |
| Maximum Collector-Emitter Voltage (V) |
80 |
| Maximum Emitter Base Voltage (V) |
5 |
| Maximum Pulsed Collector Current (A) |
16 |
| Maximum DC Collector Current (A) |
8 |
| Typical Transition Frequency (MHz) |
85 |
| Material |
Si |
| Maximum Power Dissipation (mW) |
1750 |
| Collector Current for VCE Saturation (mA) |
8000 |
| Maximum Storage Time (ns) |
500(Typ) |
| Maximum Fall Time (ns) |
140(Typ) |
| Maximum Emitter Cut-Off Current (nA) |
1000 |
| Maximum Junction Ambient Thermal Resistance |
71.4°C/W |
| Maximum Junction Case Thermal Resistance |
6.25°C/W |
| Typical Output Capacitance (pF) |
45 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Collector-Emitter Saturation Voltage (V) |
1@0.4A@8A |
| Maximum Base Emitter Saturation Voltage (V) |
1.5@0.8A@8A |
| Category |
Bipolar Power |
| Minimum DC Current Gain |
60@2A@1V|40@4A@1V |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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