Type |
PNP |
Configuration |
Single |
Maximum Collector-Emitter Voltage (V) |
80 |
Maximum Emitter Base Voltage (V) |
5 |
Maximum Pulsed Collector Current (A) |
16 |
Maximum DC Collector Current (A) |
8 |
Typical Transition Frequency (MHz) |
90 |
Material |
Si |
Maximum Power Dissipation (mW) |
1750 |
Collector Current for VCE Saturation (mA) |
8000 |
Maximum Emitter Cut-Off Current (nA) |
1000 |
Maximum Junction Ambient Thermal Resistance |
71.4°C/W |
Maximum Junction Case Thermal Resistance |
6.25°C/W |
Typical Output Capacitance (pF) |
130 |
Operating Junction Temperature (°C) |
-55 to 150 |
Maximum Storage Time (ns) |
500(Typ) |
Maximum Fall Time (ns) |
100(Typ) |
Maximum Collector-Emitter Saturation Voltage (V) |
1@0.4A@8A |
Maximum Base Emitter Saturation Voltage (V) |
1.5@0.8A@8A |
Category |
Bipolar Power |
Minimum DC Current Gain |
60@2A@1V|40@4A@1V |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |