| Type |
PNP |
| Configuration |
Single |
| Maximum Collector-Emitter Voltage (V) |
350 |
| Maximum Emitter Base Voltage (V) |
5 |
| Maximum DC Collector Current (A) |
1 |
| Material |
Si |
| Minimum Transition Frequency (MHz) |
10 |
| Maximum Power Dissipation (mW) |
1560 |
| Maximum Junction Ambient Thermal Resistance |
80°C/W |
| Maximum Junction Case Thermal Resistance |
8.33°C/W |
| Maximum Emitter Cut-Off Current (nA) |
500000 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Collector Current for VCE Saturation (mA) |
1000 |
| Maximum Collector-Emitter Saturation Voltage (V) |
1@0.2A@1A |
| Category |
Bipolar Power |
| Minimum DC Current Gain |
30@0.3A@10V|10@1A@10V |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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