| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
60 |
| Maximum Continuous Drain Current (A) |
0.5 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
5000@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
300 |
| Process Technology |
DMOS |
| Category |
Small Signal |
| Maximum Positive Gate Source Voltage (V) |
20 |
| Typical Input Capacitance @ Vds (pF) |
24@10V |
| Maximum Gate Threshold Voltage (V) |
3 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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