| Type |
NPN |
| Configuration |
Single |
| Maximum Collector-Emitter Voltage (V) |
160 |
| Maximum Collector Base Voltage (V) |
180 |
| Maximum Emitter Base Voltage (V) |
6 |
| Maximum DC Collector Current (A) |
0.6 |
| Minimum Transition Frequency (MHz) |
100 |
| Maximum Power Dissipation (mW) |
300 |
| Collector Current for VCE Saturation (mA) |
10|50 |
| Maximum Noise Figure (dB) |
8 |
| Maximum Emitter Cut-Off Current (nA) |
50 |
| Maximum Junction Ambient Thermal Resistance |
417°C/W |
| Typical Output Capacitance (pF) |
6(Max) |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Collector Cut-Off Current (nA) |
50 |
| Maximum Collector-Emitter Saturation Voltage (V) |
0.15@1mA@10mA|0.2@5mA@50mA |
| Maximum Base Emitter Saturation Voltage (V) |
1@1mA@10mA|1@5mA@50mA |
| Category |
Bipolar Small Signal |
| Minimum DC Current Gain |
80@1mA@5V|80@10mA@5V|30@50mA@5V |
| Number of Elements per Chip |
1 |
| Maximum Transition Frequency (MHz) |
300 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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