| Channel Type |
N |
| Configuration |
Single Dual Source |
| Maximum Drain Source Voltage (V) |
40 |
| Maximum Continuous Drain Current (A) |
4 |
| Maximum Frequency (MHz) |
520 |
| Output Power (W) |
8(Typ) |
| Maximum Power Dissipation (mW) |
62500 |
| Typical Output Capacitance @ Vds (pF) |
33@12.5V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
4.5@12.5V |
| Maximum VSWR |
20 |
| Typical Power Gain @ Vds (dB) |
11 |
| Typical Drain Efficiency (%) |
60 |
| Typical Input Capacitance @ Vds (pF) |
66@12.5V |
| Number of Elements per Chip |
1 |
| Process Technology |
LDMOS |
| Types of Output Stages |
Single Ended |
| Typical Power Gain (dB) |
13 |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Channel Mode |
Enhancement |
| Maximum Gate Source Voltage (V) |
±20 |
| Minimum Operating Temperature (°C) |
-65 |
| Maximum Operating Temperature (°C) |
150 |
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